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IRLZ44N

Infineon (formerly International Rectifier) · MOSFETs · TO-220AB · Through-hole

Profile irlz44n Profiled: 31 Oct 2026

Lifecycle: Active
Availability risk: Low

Specification

Transcribed from the manufacturer datasheet

TypeN-channel enhancement MOSFET, logic level
Vds55 V
Id47 A continuous at 25 °C, 33 A at 100 °C
Rds(on)22 mΩ at Vgs = 5 V, 25 mΩ at Vgs = 4 V
Vgs(th)1.0 V to 2.0 V
Gate charge48 nC total at Vgs = 5 V
Power110 W at 25 °C case, 3.8 W at 25 °C free air
ToleranceRds(on) ±10 % typical lot spread
Voltage rating55 V Vds, ±16 V Vgs
Lifecycle Active
Package outline drawing: IRLZ44N TO-220AB
TO-220AB outline, all dimensions in millimetres, transcribed from the recommended land pattern section of the manufacturer datasheet.
Datasheet referenceInfineon IRLZ44N datasheet, rev. 2023-08, figs. 1-4 and the SOA chart, plus the TO-220 thermal resistance table
ManufacturerInfineon (formerly International Rectifier)
MountingThrough-hole

Substitute graph

3 Alternates

Interchangeable part numbers for this profile. A solid node is already profiled in this catalogue; a hollow node is a valid substitute that has no profile yet.

Selection notes

The only prose on this page

Why the L matters and where it stops

The L suffix means the die is processed for a low threshold and characterised at 5 V and 4 V gate drive. It solves 5 V microcontroller drive completely at low switching frequency. Above about 20 kHz the 48 nC gate charge becomes the problem: 5 V drive through a typical 100 Ω GPIO impedance gives a 4.8 µs transition, and at 20 kHz that is a tenth of the period spent in the linear region. Use a gate driver above 20 kHz.

110 W is a case-temperature rating

110 W is specified at 25 °C case, which requires an infinite heatsink. Free air, the same part is rated 3.8 W. The real design number is the junction-to-case thermal resistance of 1.5 °C/W plus your heatsink; at 22 mΩ and 10 A the conduction loss is 2.2 W, which needs roughly a 5 °C/W heatsink to stay under a 100 °C junction in a 40 °C ambient.

Gate drive and the body diode

The ±16 V gate rating means a 12 V drive is fine and 20 V is not. In a half-bridge, the slow body diode recovery of this generation of MOSFET matters: reverse recovery is around 100-200 ns, which produces shoot-through current if both devices are on for even a moment. Use a proper dead time of at least 300 ns, or select a MOSFET with a fast-recovery body diode.

Sources

Vishay Siliconix — https://www.vishay.com/docs/62253/sq9945cey.pdf · NIST — https://www.nist.gov/standardsgov/compliance-faqs-rohs

Sourcing — Availability risk TO-220 logic-level MOSFETs are made by Infineon, ST, onsemi, Toshiba, Vishay and several Chinese manufacturers, with pin-compatible parts widely available. The main risk is not availability but counterfeiting in the TO-220 power MOSFET market, which is significant; buy from franchised channels for anything that switches real current.
Pinout and handling Standard TO-220AB: pin 1 gate, pin 2 drain, pin 3 source, with the metal tab electrically connected to the drain. That tab connection is the trap: bolting two of these to a shared heatsink without an insulator shorts their drains together, which on a half-bridge is a direct short across the supply.

Engineering information only. Verify every substitution against the manufacturer datasheet and your own operating conditions before committing a design. No pricing or vendor links appear on this page.