IRF3205
Infineon (formerly International Rectifier) · MOSFETs · TO-220AB · Through-hole
Profile irf3205 Profiled: 05 Oct 2026
Lifecycle: Active
Availability risk: Medium
Specification
Transcribed from the manufacturer datasheet
| Type | N-channel enhancement MOSFET, standard threshold |
|---|---|
| Vds | 55 V |
| Id | 110 A continuous at 25 °C, 80 A at 100 °C |
| Rds(on) | 8.0 mΩ at Vgs = 10 V |
| Vgs(th) | 2.0 V to 4.0 V |
| Gate charge | 146 nC total at Vgs = 10 V |
| Power | 200 W at 25 °C case |
| Tolerance | Rds(on) ±10 % typical lot spread |
| Voltage rating | 55 V Vds, ±20 V Vgs |
| Lifecycle | Active |
| Datasheet reference | Infineon IRF3205 datasheet, rev. 2023-04, figs. 1-4, the SOA chart and the package thermal data table |
|---|---|
| Manufacturer | Infineon (formerly International Rectifier) |
| Mounting | Through-hole |
Substitute graph
3 Alternates
Interchangeable part numbers for this profile. A solid node is already profiled in this catalogue; a hollow node is a valid substitute that has no profile yet.
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IRF3205PBF not yet profiled
The lead-free part number. Same die, and the only version still in production; the non-PBF code survives in older documentation and inventory listings.
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IRLB3034PBF not yet profiled
Infineon 40 V 195 A logic-level MOSFET with 1.7 mΩ at 10 V. Four times better conduction but only 40 V and a different gate drive expectation; a serious upgrade for a 24 V motor controller and unusable on a 48 V rail.
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IRF1404ZPBF not yet profiled
40 V 180 A with 3.7 mΩ. Similar trade: much lower loss, lower voltage ceiling. Choose it when the rail is 24 V and the switching frequency is below 50 kHz.
Selection notes
The only prose on this page
110 A is a die rating, not a package rating
The TO-220 lead frame and the wire bonds to the die limit real current to roughly 40-60 A even with an ideal heatsink, and the leads themselves add resistance. Practical continuous current for a well-mounted IRF3205 is about 30 A, which at 8 mΩ is 7.2 W. Anything above that in a TO-220 means you are relying on pulsed duty and should be calculating junction temperature, not reading the headline.
Standard threshold means 10 V gate drive
Vgs(th) of 2.0 V to 4.0 V and Rds(on) specified only at 10 V make this a 12 V-drive part. From a 5 V logic pin the device is barely enhanced (Rds(on) 30-60 mΩ) and will overheat under load. If you need a 5 V-drivable high-current MOSFET, IRLZ44N or IRLB3034 is the right family and this is the wrong one.
Gate charge and switching speed
146 nC is a large gate charge. Driving it directly from a microcontroller pin means a transition time of tens of microseconds, which at any useful PWM frequency puts the device in the linear region for most of the switching period. Use a dedicated gate driver capable of 1 A peak, and add a 10-22 Ω series gate resistor to control the resulting ringing.
Sources
Vishay Siliconix — https://www.vishay.com/docs/62253/sq9945cey.pdf · NIST — https://www.nist.gov/standardsgov/compliance-faqs-rohs
| Sourcing — Availability risk | Genuine IRF3205 is heavily counterfeited because it is the default high-current hobby and low-volume production MOSFET. Re-marked parts with a much smaller die are common on marketplace channels and fail at a fraction of the rated current. Buy from franchised distributors or accept the risk knowingly. |
|---|---|
| Pinout and handling | Standard TO-220AB: pin 1 gate, pin 2 drain, pin 3 source, tab connected to the drain. The 110 A rating assumes the leads are the thermal and electrical path; solder them into a pad with at least 100 mm² of copper per lead or the package becomes the bottleneck, not the die. |
Engineering information only. Verify every substitution against the manufacturer datasheet and your own operating conditions before committing a design. No pricing or vendor links appear on this page.